NTGS3443T1

MOSFET 20V 2A P-Channel

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SeekIC No. : 00166861 Detail

NTGS3443T1: MOSFET 20V 2A P-Channel

floor Price/Ceiling Price

Part Number:
NTGS3443T1
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/23

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 4.4 A
Resistance Drain-Source RDS (on) : 65 mOhms at 4.5 V Configuration : Single Quad Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TSOP Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V
Configuration : Single Quad Drain
Continuous Drain Current : 4.4 A
Package / Case : TSOP
Resistance Drain-Source RDS (on) : 65 mOhms at 4.5 V


Features:

• Ultra Low R DS(on)
• Higher Efficiency Extending Battery Life
• Miniature TSOP6 Surface Mount Package
• Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish



Application

• Power Management in Portable and Battery−Powered Products, i.e.: Cellular and Cordless Telephones, and  CMCIA Cards




Specifications

Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
-20
Volts
Gate−to−Source Voltage − Continuous
VGS
±2
Volts
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
− Pulsed Drain Current (Tp < 10 S)
R JA
P d
I D
I DM
244
0.5
−2.2
−10
°C/W
Watts
Amps
Amps
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
− Pulsed Drain Current (Tp < 10 S)
R JA
P d
I D
I DM
128
1.0
−3.1
−14
°C/W
Watts
Amps
Amps
Thermal Resistance
Junction−to−Ambient (Note 3)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
− Pulsed Drain Current (Tp < 10 S)
R JA
P d
I D
I DM
62.5
2.0
−4.4
−20
°C/W
Watts
Amps
Amps
Operating and Storage Temperature Range
TJ, Tstg
−55 to
150
Maximum Lead Temperature for Soldering
Purposes for 10 Seconds
TL
260
1. Minimum FR−4 or G−10PCB, operating to steady state.
2. Mounted onto a 2 in square FR−4 board (1, sq. 2 oz. cu. 0.06, thick single sided), operating to steady state.
3. Mounted onto a 2 in square FR−4 board (1, sq. 2 oz. cu. 0.06, thick single sided), t < 5.0 seconds



Parameters:

Technical/Catalog InformationNTGS3443T1
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C2.2A
Rds On (Max) @ Id, Vgs65 mOhm @ 4.4A, 4.5V
Input Capacitance (Ciss) @ Vds 565pF @ 5V
Power - Max500mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs15nC @ 4.5V
Package / Case6-TSOP
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTGS3443T1
NTGS3443T1
NTGS3443T1OS ND
NTGS3443T1OSND
NTGS3443T1OS



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