MOSFET 20V 1A P-Channel
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | 3.3 A | ||
Resistance Drain-Source RDS (on) : | 90 mOhms at 4.5 V | Configuration : | Single Quad Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TSOP | Packaging : | Reel |
Rating | Symbol | Value | Unit |
Drain−to−Source Voltage | VDSS | −20 | V |
Gate−to−Source Voltage − Continuous | VGS | ±8.0 | V |
Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp 10 S) |
RJA Pd ID IDM |
244 0.5 −1.65 −10 |
°C/W W A A |
Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp 10 S) |
RJA Pd ID IDM |
128 1.0 −2.35 −14 |
°C/W W A A |
Thermal Resistance Junction−to−Ambient (Note 3) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp 10 S) |
RJA Pd ID IDM |
62.5 2.0 −3.3 −20 |
°C/W W A A |
Operating and Storage Temperature Range | TJ, Tstg | −55 to 150 | °C |
Maximum Lead Temperature for Soldering Purposes for 10 Seconds |
TL | 260 | °C |
Technical/Catalog Information | NTGS3441T1 |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 1.65A |
Rds On (Max) @ Id, Vgs | 90 mOhm @ 3.3A, 4.5V |
Input Capacitance (Ciss) @ Vds | 480pF @ 5V |
Power - Max | 500mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 14nC @ 4.5V |
Package / Case | 6-TSOP |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | NTGS3441T1 NTGS3441T1 NTGS3441T1OS ND NTGS3441T1OSND NTGS3441T1OS |