NTF5P03T3

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Package / Case : SOT-223
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 100 mOhms
Continuous Drain Current : 5.2 A


Features:

• Ultra Low RDS(on)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Miniature SOT223 Surface Mount Package
• Avalanche Energy Specified


Application

• DCDC Converters
• Power Management
• Motor Controls
• Inductive Loads
• Replaces MMFT5P03HD


Pinout




Specifications

Rating			Symbol	Value	Unit
Drain−to−Source Voltage			VDSS	-30	V
DraintoGate Voltage (RGS = 1.0 M )			VDGR	-30	V
Gate−to−Source Voltage			VGS	±20	V
1, SQ. FR4 or G10 PCB 10 seconds		Thermal Resistance Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current (Note 1)	RTHJA PD ID ID IDM	40 3.13 25 5.2 4.1 26	°C/W Watts mW/°C A A A
Minimum FR4 or G10 PCB 10 seconds		Thermal Resistance Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current (Note 1)	RTHJA PD ID ID IDM	80 1.56 12.5 3.7 2.9 19	°C/W Watts mW/°C A A A
Operating Junction and Storage Temperature			TJ,TSTG	55 to 150	°C
Single Pulse DraintoSource Avalanche Energy Starting TJ = 25°C (VDD = 30 Vdc, VGS = 10 Vdc, Peak IL = 12 Apk, L = 3.5 mH, RG = 25 )			EAS	225	mJ

1. Repetitive rating; pulse width limited by maximum junction temperature.