Features: ` Replaces Expensive Hybrid and Module FET OP Amps
` Rugged JFET's Allow BlowOut Free Handling Compared with MOSFET Input Device
` Excellent for Low Noise Applications using either High or Low Source Impedance Very Low 1/f Corner
` Offset Adjust does not Degrade Drift or CommonMode Rejection as in Most Monolithic Amplifiers
` New Output Stage Allows use of Large Capacitive Loads (10,000pF) without Stability Problems
` Internal Compensation and Large Differential Input Voltage CapabilityApplication· Precision High Speed Integrators
· Fast D/A and A/D Converters
· High Impedance Buffers
· Wideband, Low Noise, Low Drift Amplifiers
· Logarithmic Amplifiers
· Photocell Amplifiers
· Sample and Hold CircuitsPinout
SpecificationsSupply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±18V
Maximum Power Dissipation (at +25°C, Note 1), Pd . . . . . . . . . . . 570mW
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±30V
Input Voltage Range (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±16V
Output ShortCircuit Duration . . . . . . . . . . . . . . . . . . . . . . . . . Continuous
Maximum Operating Junction Temperature (Note 1), TJmax . . . . . +115°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . 65° to +150°C
Lead Temperature (During Soldering, 10sec), TL . . . . . . . . . . . . . . +300°C
Thermal Resistance, JunctiontoAmbient (Note 1), RthJC . . . . +150°C/W
Note 1. The maximum power dissipation for this device must be derated at elevated temperatures and is dictated by TJmax, RthJC, and the ambient temperature, TA. The maximum available power dissipation at any temperature is Pd = (TJmax TA)/RthJC or the +25°C Pdmax, whichever is less.
Note 2. Unless otherwise specified, the absolute maximum negative input voltage is equal to the negative power supply voltage.
DescriptionThe NTE937 is a monolithic JFET input operational amplifier in an 8Lead Metal Can type package incorporating wellmatched, high voltage JFET's on the same chip with standard bipolar transistors.
This amplifier NTE937 features low input bias and offset currents, low offset voltage and offset voltage drift, coupled with offset adjust which does not degrade drift or commonmode rejection. NTE937 is also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.
NTE937 Data Sheet
