NTE929

Features:

` High IC 100mA max
` Low V_CEsat (at 50mA) 0.7V max.
` Matched pair (Q1 and Q2) V<sub>10</sub> (V<sub>BE</sub> matched): ±5mV max. I<sub>10</sub> (at 1mA): 2.5A max.
` 5 independent transistors plus separate substrate connection.


Application

` Signal processing and switching systems operating from DC to VHF
` Lamp and relay driver
` Differential amplifier
` Temperaturecompensated amplifier
` Thyristor firing


Pinout




Specifications

Power Dissipation, P_D
Any One Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .500mW
Total Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .750mW
Derate Above 55 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . .Derate Linearly 6.67mW/
Operating Ambient Temperature Range, T_opr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .55 to +125
Storage Temperature range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .65 to +150
Lead Temperature (During Soldering, 1/16" ±1/32" from case, 10sec max), T_L . . . . . . . . . . . . . . +265
The following ratings apply for each transistor in the device:
CollectorEmitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
CollectorBase Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20V
CollectorSubstrate Voltage, V_CIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
EmitterBase Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Base Current, I_B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Note 1. The collector of each transistor of the NTE929 is isolated from the substrate by an integral diode. The substrate must be connected to a voltage which is more negative than any collector voltage in order to maintain isolation between transistors and provide normal transistor action. To avoid undesired coupling between transistors, the substrate terminal (Pin5) should be maintained at either DC or signal (AC) ground. A suitable bypass capacitor can be used to establish a signal ground.


Description

The NTE929 is a versatile array of five highcurrent (to 100mA) NPN transistors on a common monolithic substrate. In addition, two of these transistors NTE929 (Q1 and Q2) are matched at low currents (i.e. 1mA) for applications in which offset parameters are of special importance.

Independent connections for each transistors NTE929 plus a separate terminal for the substrate permit maximum flexibility in circuit design.