NTE912

The NTE912 is designed as one kind of integrated circuit general purpose transistor array device that consists of five generalpurpose silicon NPN transistors on a common monolithic substrate in a 14Lead DIP type package. Two of the transistors are internally connected to form a differentiallyconnected pair. And this NTE912 can be used in wide range of applications such as (1)general use in all types of signal processing systems operating anywhere in the frequency range from DC to VHF; (2)custom designed differential amplifiers; (3)temperature compensated amplifiers.

Features of the NTE912 are:(1)two matched pairs of transistors: VBE matched ±5mV input offset current 2A max. @ Ic = 1mA; (2)5 general purpose monolithic transistors; (3)operation from DC to 120MHz; (4)wide operating current range; (5)low noise figure: 3.2dB typ @ 1kHz.

The absolute maximum ratings of the NTE912 can be summarized as:(1)Collector Emitter Voltage: 15 V;(2)Collector Base Voltage: 20 V;(3)Collector Substrate Voltage: 20 V;(4)Emitter Base Voltage: 5 V;(5)Collector Current, Ic: 50 mA;(6)Operating Temperature Range: -55 to +125°C;(7)Storage Temperature Range: -65 to +150°C;(8)Lead Temperature (During Soldering, 1/16" ±1/32" from case, 10 sec max): +265°C. If you want to know more information about NTE912, please download the datasheet in www.seekic.com or www.chinaicmart.com .