Features: · Power Gain: 23dB (Typ) @ 200MHz· Noise Figure: 4.6dB (Typ) @ 200MHz· Two Different Amplifiers on a Common Substrate· Independently Accessible Input and OutputsSpecificationsPower Dissipation, PDAny One Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
NTE906: Features: · Power Gain: 23dB (Typ) @ 200MHz· Noise Figure: 4.6dB (Typ) @ 200MHz· Two Different Amplifiers on a Common Substrate· Independently Accessible Input and OutputsSpecificationsPower Dissipa...
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The NTE906 is an integrated circuit in a 12Lead TO5 type package consisting of two independent differential amplifiers with associated constantcurrent transistors on a common monolithic substrate.
The six transistors which comprise the amplifiers are generalpurpose devices which exhibit low 1/f noise and a value of fT in excess of 1GHz. These features make the NTE906 useful from DC to 500MHz. Bias and load resistors have been omitted to provide maximum application flexibility.
The monolithic construction of the NTE906 provides close electrical and thermal matching of the amplifiers.
This feature makes this NTE906 particularly useful in dualchannel applications where matched performance of the two channels is required.