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NTE904

Features: ` Matched Monolithic General Purpose Transistors` Current Gain Matched to ±10%` BaseEmitter Voltage Matched to ±2mV` Operation from DC to 120MHz` Wide Operating Current Range` Low Noise FigureApplication· General use in Signal Processing Systems in DC through VHF Range· Custom Designed D...

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SeekIC No. : 004436543 Detail

NTE904: Features: ` Matched Monolithic General Purpose Transistors` Current Gain Matched to ±10%` BaseEmitter Voltage Matched to ±2mV` Operation from DC to 120MHz` Wide Operating Current Range` Low Noise Fi...

NTE904 Data Sheet

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Part Number:
NTE904
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` Matched Monolithic General Purpose Transistors
` Current Gain Matched to ±10%
` BaseEmitter Voltage Matched to ±2mV
` Operation from DC to 120MHz
` Wide Operating Current Range
` Low Noise Figure


Application

· General use in Signal Processing Systems in DC through VHF Range
· Custom Designed Differential Amplifiers
· Temperature Compenstaed Amplifiers


Specifications

CollectorEmitter Voltage (Each Transistor), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
CollectorBase Voltage (Each Transistor), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30V
CollectorSubstrate Voltage (Each Transistor, Note 1), VCIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
EmitterBase Voltage (Each Transistor), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current (Each Transistor), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Power Dissipation, PD
Any One Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .300mW
Total package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .450mW
Derate Above 85 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5mW/
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +125
Storage Temperature Range, Tstg. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +150
Note 1. The collector of each transistor is isolated from the substrate by an integral diode. The substrate (Pin10) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.


Description

The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic substrate in a 12Lead TO5 type metal can. Two of the four transistors are connected in the Darlington configuration. The substrate is connected to a separate terminal for maximum flexibility.

The transistors of the NTE904 are well suited to a wide variety of applications in low power systems in the DC through VHF range. NTE904 may be used as discrete transistors in conventional circuits but in addition they provide the advantages of close electrical and thermal matching inherent in integrated circuit construction.




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