NTE6664

Voltage on VCC Supply Relative to V_SS, V_CC . . . . . . . . . . . . . . . . . . . . . .2 to +7V
Voltage Relative to VSS for Any Pin Except V_CC, V_in, V_out . . . . . . . . . . . .1 to +7V
Data Out Current (Short Circuit), I_out . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  50mA
Power Dissipation, P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .     1W
Operating Temperature Range, T_A . . . . . . . . . . . . . . . . . . . . . . . . . . .  .0 to +70°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . ..65° to +150°C 

Note 1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to RECOMMENDED OPERATING CONDITIONS. Exposure to higher than recommended voltages for extended periods of time could affect the device reliability.

The NTE6664 is a 65,536 Bit, highspeed, dynamic Random Access Memory.  Organized as 65,536 onebit words and fabricated using HMOS highperformance NChannel silicongate technology, this 5V only dynamic RAM combines high performance with low cost and improved reliability.

By multiplying row and column address inputs, the NTE6664 requires only eight address lines and permits packaging in a standard 16Lead DIP package.  Complete address decoding is done on chip with address latches incorporated.  Data out is controlled by CAS allowing for greater system flexibility.

All inputs and outputs, including clocks, are fully TTL compatible.  The NTE6664 incorporates a onetransistor cell design and dynamic storage techniques.  In addition to the RASonly refresh mode, the refresh control function available on Pin1 provides two additional modes of refresh, automatic and self refresh.