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NTE629

Features: Low Forward VoltageHigh Current CapabilityFast Switching for High EfficiencyHigh Surge CapacityGlass Passivated Chip JunctionSpecificationsPeak Repetitive Reverse Voltage, VRRM NTE629 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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SeekIC No. : 004436453 Detail

NTE629: Features: Low Forward VoltageHigh Current CapabilityFast Switching for High EfficiencyHigh Surge CapacityGlass Passivated Chip JunctionSpecificationsPeak Repetitive Reverse Voltage, VRRM NTE629 . . ...

NTE629 Data Sheet

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Part Number:
NTE629
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 Low Forward Voltage
 High Current Capability
 Fast Switching for High Efficiency
 High Surge Capacity
 Glass Passivated Chip Junction


Specifications

Peak Repetitive Reverse Voltage, VRRM
         NTE629 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .200V .
         NTE630 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .600V .
Working Peak Reverse Voltage, VRWM
         NTE629 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .200V .
         NTE630 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .600V .
DC Blocking Voltage, VR
         NTE629 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  200V .
         NTE630 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .600V .
RMS Reverse Voltage, VR(RMS)
         NTE629 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .140V .
         NTE630 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .420V .
Average Rectifier Forward Current (Rated VR, TC = +150°C), IF(AV)
         Per Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
        Total Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16A
NonRepetitive Peak Surge Current, IFSM
        (8.3ms Single half SineWave Superimposed on Rated Load)  . . . . . . . . . . .    250A
Operating Junction Temperature Range (Reverse Voltage Applied), TJ . 65° to +175°C
Storage Temperature Range (Reverse Voltage Applied), Tstg . . . . . . . .65° to +175°C


Description

The NTE629 and NTE630 are dual, fast recovery silicon rectifiers in a TO220 type package designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers and low RF interference.




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