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NTE61 (PNP)

Features: High Safe Operating Area: 250W @ 50VFor Low Distortion Complementary DesignsHigh DC Current Gain: hFE = 25 Min @ IC = 5ASpecificationsCollectorEmitter Voltage, V CEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140VCollectorBase V...

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NTE61 (PNP): Features: High Safe Operating Area: 250W @ 50VFor Low Distortion Complementary DesignsHigh DC Current Gain: hFE = 25 Min @ IC = 5ASpecificationsCollectorEmitter Voltage, V CEO(sus) . . . . . . . . ....

NTE61 (PNP) Data Sheet

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Part Number:
NTE61 (PNP)
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

High Safe Operating Area:  250W @ 50V
For Low Distortion Complementary Designs
High DC Current Gain:  hFE = 25 Min @ IC = 5A


Specifications

CollectorEmitter Voltage, V CEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V
CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  140V
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .   20A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Continuous Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  25A
Total Power Dissipation (TC = +25), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W
             Derate Above 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43W/
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +200
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +200
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.70/W
Lead Temperature (During Soldering, 1/16" from Case, 10sec Max), TL . . . . . . . . . . . . . . . .. . . . .  +265

Note 1. Matched complementary pairs are available upon request (NTE61MCP).  Matched comple-mentary pairs have their gain specification (hFE) matched to within 10% of each other.


Description

The NTE60 (NPN) and NTE61 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications.


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