Description
Features:
* Dual Diode Construction: Pin1 and Pin3 may be Connected for Parallel Operation at Full Range
* Guarding for Stress Protection
* Low Forward Voltage
* +150°C Operating Junction Temperature
* Guaranteed Reverse Avalanche
Specifications
Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . .45V
Working Peak Reverse Voltage, VRWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... . . . .45V
DC Blocking Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .45V
Average Rectified Forward Current (VR = 45V, TC = +105°C), IF(AV)
Per Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ......... . . .30A
Per Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ......... . . .15A
Peak Repetitive Forward Current, Per Diode (VR = 45V, Square Wave, 20kHz), IFRM . . . . . ............. . .30A
NonRepetitive Peak Surge Current, IFSM
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60Hz) . . . . . . ........................ . . .200A
Peak Repetitive Reverse Current, Per Diode (2µs, 1kHz), . . . . . . . . . . . . . . . . . . . . . . ................... . . . . .2A
Operating Junction Temperature Range, TJ IRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . ... . .. 65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .65° to +175°C
Peak Surge Junction Temperature (Forward Current Applied), TJ(pk) . . . . . . . . . . . . . . .......... . . . .+175°C
Voltage Rate of Change (VR = 45V), . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ........ . . .dv/dt 1000V/µs
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...... . . .1.4°C/W
Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..... . . . .40°C/W
Description
The NTE6090 is a silicon dual power rectifier in a TO3P/TO218 type package designed using the Schottky Barrier principle with a platinum barrier metal.
NTE6090 Data Sheet
