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NTE595

SpecificationsContinuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . 70VRepetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70VNonRepetitive Peak Forward Current (Per device...

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SeekIC No. : 004436396 Detail

NTE595: SpecificationsContinuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . 70VRepetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . ....

NTE595 Data Sheet

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Part Number:
NTE595
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/8

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Product Details

Description



Specifications

Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . 70V
Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
NonRepetitive Peak Forward Current (Per device, t = 1s), IFSM . . . . . . . . . . . . . . . . 500mA
Average Rectified Forward Current (Average over any 20ms period, Note 1), IF(Av) . . 250mA
DC Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . 250mA
Repetitive Peak Forward Current, IFRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 250mA
Total Power Dissipation (TA +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . 65° to +175°C
Thermal Resistance, JunctiontoAmbient (Note 2), RthJA . . . . . . . . . . . . . . . . . . . . . 430K/W


Description

The NTE595 consists of two silicon diodes in an SOT-23 type surface mount package.  The cathode are common and the device is intended for high-speed switching applications in thick and thin-film circuits.




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