SpecificationsPeak Reverse Voltage, PRV NTE5864, NTE5865* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5884, NTE5885* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5888, NTE5889* . . . . . . . . . . . . . ...
NTE5864: SpecificationsPeak Reverse Voltage, PRV NTE5864, NTE5865* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5884, NTE5885* . . . . . . . . . . . . . . . . ....
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Features: High Collector Breakdown Voltage: V(BR)CEO = 100V Min @ IC = 1mAHigh Power Dissipation: ...
The NTE5864 through NTE5889 are silicon power rectifier diodes in a DO4 type package designed with very low leakage current as well as good surge handling capability. These NTE5864 are ideal for use in applications where economy, power capability, and reliability are demanding considerations.