NTE578

Low Reverse Current
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
Guard-Ring for Stress Protectio
Low Forward Voltage
150 Operating Junction Temperature
High Surge Capacity

Peak Repetitive Reverse Voltage, V_RRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . 90V
Working Peak Reverse Voltage, V_RWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . 90V
DC Blocking Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . 90V
Average Rectified Forward Current, IO
          (V_R (equiv) 0.2VR(dc), R_JA = 50°C/W, P.C. Board Mounting, T_A = +120°C) . . . 1A
Nonrepetitive Peak Surge Current, I_FSM
          (Surge applied at rated load conditions, halfwave single phase, 60Hz) . . . . . . . 25A
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . .  . 65° to +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . 65° to +150°C
Voltage Rate of Change (Rated V_R), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . 10V/ns
Thermal Resistance, JunctiontoAmbient, R_thJA . . . . . . . . . . . . . . . . . . . . . . . .  . . . 1°C/W

The NTE578 is a general purpose rectifier employing the Schottky Barrier principle in a large area metal-to-silicon power diode.  State-of-the art geometry of NTE578 features epitaxial construction with o passivation and metal overlap contact.  Ideally suited for use as rectifiers in low-voltage, high-frquency inverters, free wheeling diodes, and polarity protection diodes.