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NTE573

Features: Low Forward VoltageLow Power LossHigh Surge CapacityLow Stored Charge Majority Carrier ConductionHigh EfficiencyHigh Switching CapabilitySpecificationsPeak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60VWorking Pe...

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SeekIC No. : 004436336 Detail

NTE573: Features: Low Forward VoltageLow Power LossHigh Surge CapacityLow Stored Charge Majority Carrier ConductionHigh EfficiencyHigh Switching CapabilitySpecificationsPeak Repetitive Reverse Voltage, VRRM...

NTE573 Data Sheet

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Part Number:
NTE573
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Low Forward Voltage
Low Power Loss
High Surge Capacity
Low Stored Charge Majority Carrier Conduction
High Efficiency
High Switching Capability


Specifications

Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . 60V
Working Peak Reverse Voltage, VRWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . 60V
DC Blocking Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . 60V
RMS Reverse Voltage, VR(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . 42V
Average Forward Rectified Current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..... .. . . 5A
NonRepetitive Peak Surge Current, IFSM
           (Surge applied at rated load conditions halfwave, single phase, 60Hz, TL = +70°C) . 250A
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . 65° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . 65° to +125°C


Description

The NTE573 is an axial lead metal-to-silicon power diode using the Schottky Barrier principle.  Stat of-the-art geometry features epitaxial construction with oxidpassivation and metal overlap contact.This NTE573 is ideally suited for use in low-voltage, high-frequency inverters, as free wheeling diode and polarity protection diodes.




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