SpecificationsRepetitive Peak OffState Voltage (Gate Open, TJ = +100°C), VDRM NTE5655 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5656 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
NTE5655: SpecificationsRepetitive Peak OffState Voltage (Gate Open, TJ = +100°C), VDRM NTE5655 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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Features: High Collector Breakdown Voltage: V(BR)CEO = 100V Min @ IC = 1mAHigh Power Dissipation: ...