SpecificationsRepetitive Peak OffState Voltage (TJ = +90°C, Gate Open, Note 1), VDROM NTE5650 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V NTE5651 . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
NTE5650: SpecificationsRepetitive Peak OffState Voltage (TJ = +90°C, Gate Open, Note 1), VDROM NTE5650 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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Features: High Collector Breakdown Voltage: V(BR)CEO = 100V Min @ IC = 1mAHigh Power Dissipation: ...
The NTE5650 through NTE5653 sensitive gate TRIACs are designed to be driven directly with IC and MOS devices. These devices features a voidfree glass passivated chip and are hermetically sealed in TO5 outline cans.
The NTE5650 through NTE5653 are bidirectional triode thyristors and may be switched from off state to conduction for either polarity of applied voltage with positive or negative gatetrigger current and are designed for control applications in lighting, heating, cooling and static switching relays.