Features: 2 Mode Gate Triggering Blocking Voltages to 600V All Diffused and Glass Passivated Junctions for Greater Parameters Uniformity and StabilitySpecificationsRepetitive Peak OffState Voltage (TC = +110°C, Note 1), VDRM NTE5600 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
NTE5607: Features: 2 Mode Gate Triggering Blocking Voltages to 600V All Diffused and Glass Passivated Junctions for Greater Parameters Uniformity and StabilitySpecificationsRepetitive Peak OffState Voltag...
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Features: High Collector Breakdown Voltage: V(BR)CEO = 100V Min @ IC = 1mAHigh Power Dissipation: ...
2 Mode Gate Triggering
Blocking Voltages to 600V
All Diffused and Glass Passivated Junctions for Greater Parameters Uniformity and Stability
The NTE5600 through NTE5607 TRIACs are designed primarily for fullwave AC control applications such as light dimmers, motor controls, heating controls and power supplies; or wherever fullwave silicon gate controlled solidstate devices are needed. TRIAC type thyristors NTE5607 switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering.