NTE56051

Specifications

Repetitive Peak OffSate Voltage (Note 1), V_DRM
          NTE56051 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . 500V
          NTE56052 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . 600V
RMS OnState Current (Full Sine Wave, T_MB 102°C), I_T(RMS) . . . . ......... . . . 8A
NonRepetitive Peak OnState Current, ITSM
         (Full Sine Wave, T_J = +125°C prior to Surge, with Reapplied V_DRMmax)
             t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55A
             t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . . . . 60A
I²t for Fusing (t = 10ms), I²t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . 15A2sec
Repetitive RateofRise of OnState Current after Triggering, dI_T/dt
        (I_TM = 1²A, I_G = 0.2A, dI_G/dt = 0.2A/s)
            MT₂ (+), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . 50A/s
            MT₂ (+), G () . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/s
            MT₂ (), G () . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . 50A/s
            MT₂ (), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A/s
Peak Gate Current, I_GM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . . . 2A
Peak Gate Voltage, V_GM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Peak Gate Power, P_GM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . 5W
Average Gate Power (Over Any 20ms Period), P_G(AV) . . . . . . . . . . . . . .. . . . 500mW
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . . +125°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . .. . 40° to +150°C
Thermal Resistance, JunctiontoMounting Base, R_thJMB
          Full Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0K/W
          Half Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . . . . . 2.4K/W
Typical Thermal Resistance, JunctiontoAmbient, R_thJA . . . . . . . . . . .... . . . . 60K/W


Description

The NTE56051 and NTE56052 are glass passivated, Low Logic Level TRIACs in a TO220 type package designed for use in general purpose bidirectional switching and phase control applications.These NTE56051 are intended to be interfaced directly to microcontrollers, logic integrated circuits, and other low power gate trigger circuits.