NTE2532

Supply Voltage (Note 2), V_CC . . . . . . . . . . . . . . . . . . . .0.3V to +7V
Supply Voltage (Note 2), V_PP . . . . . . . . . . . . . . . . . . ..0.3V to +28V
All Input Voltages (Note 1) . . . . . . . . . . . . . . . . . . . . . .0.3V to +7V
Output Voltage (Operating, with Respect to V_SS) . . . . . .0.3V to 7V
Operating Ambient Temperature Range, T_A . . . . . . . . .0° to +70°C
Storage Temperature Range, T_stg . . . . . . . . . . . . .55° to +150°C
Note 1. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the "Recommended Operation Conditions" section of this specification is not implied. Exposure to absolutemaximumrated conditions for extended periods may affect device reliability.
Note 2. Under absolute maximum ratings, voltage values are with respect to the most negative supply voltage, VS (substrate).

The NTE2532 is a 32,768bit, ultravioletlighterasable, electricallyprogrammable readonly memory in a 24Lead DIP type package. This NTE2532 is fabricated using Nchannel silicongate technology for high speed and simple interface with MOS and bipolar circuits. All inputs (including program data inputs) can be directly driven by Series 74 TTL circuits without the use of external pull up reistors, and each output can drive one Series 74 circuit without external resistors. The data outputs of NTE2532  are threestate for connecting mutiple devices to a common bus.

Since the NTE2532 operates from a single +5V supply (in the read mode), it is ideal for use in microprocessor systems. One other (+25V) supply is needed for programming but all programming signals are TTL level, requiring a single 10ms pulse. For programming outside of the system, existing EPROM programmers can be used. Locations of NTE2532 may be programmed singly, in blocks, or at random. Total programming time for all bits is 41 seconds.