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NTE2383

Features: · Lower RDS(ON)· Improved Inductive Ruggedness· Fast Switching Times· Rugged Polysilicon Gate Cell Structure· Lower Input Capacitance· Extended Safe Operating Area· Improved High Temperature ReliabilitySpecificationsDrainSource Voltage (Note 1), VDSS . . . . . . . . . . . . . . . . . . ....

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SeekIC No. : 004436149 Detail

NTE2383: Features: · Lower RDS(ON)· Improved Inductive Ruggedness· Fast Switching Times· Rugged Polysilicon Gate Cell Structure· Lower Input Capacitance· Extended Safe Operating Area· Improved High Temperatu...

NTE2383 Data Sheet

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Part Number:
NTE2383
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Lower RDS(ON)
· Improved Inductive Ruggedness
· Fast Switching Times
· Rugged Polysilicon Gate Cell Structure
· Lower Input Capacitance
· Extended Safe Operating Area
· Improved High Temperature Reliability


Specifications

DrainSource Voltage (Note 1), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100V
DrainGate Voltage (RGS = 1MΩ, Note 1), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . .100V
GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .±20V
Continuous Drain Current, ID
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10.5A
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  7.5A
Drain Current, Pulsed (Note 3), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42A
Gate Current, Pulsed, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .±1.5A
Single Pulsed Avalanvhe Energy (Note 4), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . .510mJ
Avalanche Current, IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . .10.5A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .75W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.6W/°C
Operating Junction Temperature Range, Topr . . . . . . . . . . . . . . . . . . .55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C
Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . .  .62.5°C/W
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . ..1.67°C/W
Thermal Resistance, CasetoSink (Note 5), RthCS . . . . . . . . . . . . . . . . . . . ..0.5°C/W
Maximum Lead Temperature (During Soldering, 1/8" from case, 5sec), TL . . . .+300°C
Note 1. TJ = +25° to +150°C
Note 2. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
Note 3. Repetitive rating: Pulse width limited by max. junction temperature.
Note 4. L = 8.5mH, VDD = 25V, RG = 25Ω, Starting TJ = +25°C.
Note 5. Mounting surface flat, smooth, and greased.


Description

The NTE2383 is a MOS power PChannel FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers.




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