SpecificationsCollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .80VCollectorBase Voltage, VCBONTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .140VNTE129 . . . . . . . . . ....
NTE128: SpecificationsCollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .80VCollectorBase Voltage, VCBONTE128 . . . . . . . . . . . . . . . . . . . . ....
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The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type package designed primarily for amplifier and switching applications. These NTE128 features high breakdown voltages, low leakage currents, low capacity, and a beta useful over an extremely wide current range.