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NTE108

SpecificationsCollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15VCollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..30VEmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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SeekIC No. : 004435887 Detail

NTE108: SpecificationsCollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15VCollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....

NTE108 Data Sheet

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Part Number:
NTE108
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30V
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .50mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . .625mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . .55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . .55° to +150°C
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . .+83.3°C/W
Thermal Resistance, JunctiontoAmbient (Note 1), RthJA . . . . . .+200°C/W
Note 1. RJA is measured with the device soldered into a typical printed circuit board.


Description

The NTE108 is a silicon NPN transistor in a TO92 type case designed for lownoise, highfrequency amplifiers, 1GHz local oscillatore, nonneutralized IF amplifiers, and nonsaturating circuits with rise and fall times less than 2.5ns.




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