MOSFET NFET 40V HD3E
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 40 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 12.2 A | ||
Resistance Drain-Source RDS (on) : | 10 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DPAK | Packaging : | Rail |
Technical/Catalog Information | NTD5406NG |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25° C | 70A |
Rds On (Max) @ Id, Vgs | 10 mOhm @ 30A, 10V |
Input Capacitance (Ciss) @ Vds | 2500pF @ 32V |
Power - Max | 100W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 45nC @ 10V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NTD5406NG NTD5406NG |