NTD5406NG

MOSFET NFET 40V HD3E

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SeekIC No. : 00162398 Detail

NTD5406NG: MOSFET NFET 40V HD3E

floor Price/Ceiling Price

Part Number:
NTD5406NG
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 40 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 12.2 A
Resistance Drain-Source RDS (on) : 10 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Rail    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : DPAK
Drain-Source Breakdown Voltage : 40 V
Resistance Drain-Source RDS (on) : 10 mOhms
Packaging : Rail
Continuous Drain Current : 12.2 A


Parameters:

Technical/Catalog InformationNTD5406NG
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25° C70A
Rds On (Max) @ Id, Vgs10 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 2500pF @ 32V
Power - Max100W
PackagingTube
Gate Charge (Qg) @ Vgs45nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTD5406NG
NTD5406NG



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