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NTD32N06-1G

MOSFET 60V 32A N-Channel

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SeekIC No. : 00162029 Detail

NTD32N06-1G: MOSFET 60V 32A N-Channel

NTD32N06-1G Data Sheet

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Part Number:
NTD32N06-1G
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 32 A
Resistance Drain-Source RDS (on) : 26 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Tube
Resistance Drain-Source RDS (on) : 26 mOhms
Drain-Source Breakdown Voltage : 60 V
Package / Case : IPAK
Continuous Drain Current : 32 A


Parameters:

Technical/Catalog InformationNTD32N06-1G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C32A
Rds On (Max) @ Id, Vgs26 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds 1725pF @ 25V
Power - Max1.5W
PackagingTube
Gate Charge (Qg) @ Vgs60nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTD32N06 1G
NTD32N061G



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