NTD30N02T4

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25° C: 30A
Power - Max: 75W
Drain to Source Voltage (Vdss): 24V
Gate Charge (Qg) @ Vgs: 20nC @ 4.5V
Manufacturer: ON Semiconductor
Supplier Device Package: DPAK-3
Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds: 1000pF @ 20V


Parameters:

Technical/Catalog Information	NTD30N02T4
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	24V
Current - Continuous Drain (Id) @ 25° C	30A
Rds On (Max) @ Id, Vgs	14.5 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds	1000pF @ 20V
Power - Max	75W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	20nC @ 4.5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NTD30N02T4 NTD30N02T4 NTD30N02T4OS ND NTD30N02T4OSND NTD30N02T4OS