NTD3055L104-1G

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 15 V
Continuous Drain Current : 12 A
Drain-Source Breakdown Voltage : 60 V
Package / Case : IPAK
Resistance Drain-Source RDS (on) : 104 mOhms at 5 V


Description

The NTD3055L104-1G is one member of the NTD3055L104 series.The NTD3055L104 is designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.The Forward Biased Safe Operating Area curves define the maximum simultaneous drain-to-source voltage and drain current that a transistor can handle safely when it is forward biased. Curves of NTD3055L104-1G are based upon maximum peak junction temperature and a case temperature (TC) of 25. Peak repetitive pulsed power limits of NTD3055L104-1G are determined by using the thermal response data in conjunction with the procedures discussed in AN569, "Transient Thermal Resistance -General Data and Its Use."

Features of the NTD3055L104-1G are:(1)Pb-free packages are available; (2)lower RDS(on); (3)lower VDS(on); (4)tighter Vsd specification; (5)lower diode reverse recovery time; (6)lower reverse recovery stored charge.For reliable operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less than the rated limit and adjusted for operating conditions differing from those specified. Although industry practice is to rate in terms of energy, avalanche energy capability of NTD3055L104-1G is not a constant. The energy rating decreases non-linearly with an increase of peak current in avalanche and peak junction temperature.

The absolute maximum ratings of the NTD3055L104-1G can be summarized as:(1)drain-to-source voltage:60V;(2)storage temperature:-55 to 175;(3)operating temperature:-55 to 175;(4)gate-to-source voltage:15V;(5)continuous drain current:12A;(6)drain-to-gate voltage:60V.Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.SCILLC reserves the right to make changes without further notice to any products herein.  SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,including without limitation special, consequential or incidental damages."Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.

Parameters:

Technical/Catalog Information	NTD3055L104-1G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	104 mOhm @ 6A, 5V
Input Capacitance (Ciss) @ Vds	440pF @ 25V
Power - Max	1.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	20nC @ 5V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NTD3055L104 1G NTD3055L1041G NTD3055L104 1GOS ND NTD3055L1041GOSND NTD3055L104-1GOS