MOSFET 60V 9A N-Channel
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 9 A | ||
Resistance Drain-Source RDS (on) : | 150 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | IPAK | Packaging : | Tube |
Technical/Catalog Information | NTD3055-150-1G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 9A |
Rds On (Max) @ Id, Vgs | 150 mOhm @ 4.5A, 10V |
Input Capacitance (Ciss) @ Vds | 280pF @ 25V |
Power - Max | 1.5W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 15nC @ 10V |
Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NTD3055 150 1G NTD30551501G |