MOSFET 60V 18A N-Channel
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 15 V | Continuous Drain Current : | 18 A | ||
Resistance Drain-Source RDS (on) : | 0.054 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DPAK | Packaging : | Tube |
Rating | Symbol | Value | Unit |
Drain−to−Source Voltage | VDSS | 60 | Vdc |
Drain−to−Gate Voltage (RGS = 10 M) | VDGR | 60 | Vdc |
Gate−to−Source Voltage − Continuous − Non−repetitive (tp10 ms) |
VGS VGS |
15 20 |
Vdc |
Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tp10 s) |
ID ID IDM |
18 10 54 |
Adc Apk |
Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 2) |
PD | 55 0.36 2.1 |
W W/°C W |
Operating and Storage Temperature Range | TJ, Tstg | −55 to +175 |
°C |
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 5.0 Vdc, L = 1.0 mH, IL(pk) = 12 A, VDS = 60 Vdc) |
EAS | 72 | mJ |
Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) |
RJC RJA RJA |
2.73 100 71.4 |
°C/W |
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds |
TL | 260 | °C |