MOSFET 28V 90A N-Channel
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 24 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 90 A | ||
Resistance Drain-Source RDS (on) : | 5.8 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | D2PAK | Packaging : | Tube |
Rating | Symbol | Value | Unit |
Drain−to−Source Voltage | VDSS | 24 | Vdc |
Gate−to−Source Voltage − Continuous |
VGS | +20 | Vdc |
Drain Current − Continuous @ TA = 25°C − Single Pulse (tp = 10 s) |
ID IDM |
90 200 |
A A |
Total Power Dissipation @ TA = 25°C Derate above 25°C |
PD | 85 0.66 |
W W/°C |
Operating and Storage Temperature | TJ, Tstg | −55 to +150 | °C |
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 28 Vdc, VGS = 10 Vdc, L = 5.0 mH, IL(pk) = 17 A, RG = 25 ) |
EAS | 733 | mJ |
Thermal Resistance Junction−to−Case Junction−to−Ambient (Note 1) |
RJC RJA |
1.55 70 |
°C/W |
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds |
TL | 260 | °C |
NTB90N02 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.