MOSFET 28V 85A N-Channel
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 28 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 85 A | ||
Resistance Drain-Source RDS (on) : | 0.0061 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | D2PAK | Packaging : | Tube |
Rating |
Symbol |
Value |
Unit |
Drain−to−Source Voltage |
VDSS |
28 |
Vdc |
Gate−to−Source Voltage − Continuous |
VDGB |
±20 |
Vdc |
Drain Current − Continuous @ TC = 25 − Single Pulse (tp10 s) |
ID IDM |
85* 190 |
Adc Apk |
Total Power Dissipation @ TC = 25 Derate above 25 |
PD |
80 0.66 |
W W/ |
Operating and Storage Temperature Range |
TJ ,Tstg |
−55 to +150 |
|
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25 (VDD = 28 Vdc, VGS = 10 Vdc, L = 5.0 mH IL(pk) = 17 A, VDS = 25) |
EAS |
733 |
mJ |
Thermal Resistance Junction−to−Case Junction−to−Ambient (Note 1) |
RJC RJA |
1.55 70 |
/W |
Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds |
TL |
260 |
|
NTB85N03 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.