MOSFET -60V -18.5A
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 18.5 A | ||
Resistance Drain-Source RDS (on) : | 140 mOhms at 5 V | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | D2PAK | Packaging : | Tube |
Parameter | Symbol | Value | Unit | ||
Drain−to−Source Voltage | VDSS | -60 | V | ||
Gate−to−Source Voltage | VGS | ±20 | V | ||
Continuous Drain Current (Note 1) |
Steady State |
TA = 25 | ID | −18.5 | A |
Power Dissipation (Note 1) |
Steady State |
TA = 25 | PD | 88 | W |
Pulsed Drain Current | tp = 10µs | IDM | -55 | A | |
Operating Junction and Storage Temperature | TJ, TSTG |
−55 to 175 |
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Single Pulse Drain−to−Source Avalanche Energy (VDD = 25 V, VGS = 5.0 V, IPK = 15 A, L = 3.0 mH, RG = 25 ) |
EAS | 338 | mJ | ||
Lead Temperature for Soldering Purposes (1/8" from case for 10 s) |
TL | 260 |
Technical/Catalog Information | NTB5605P |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 18.5A |
Rds On (Max) @ Id, Vgs | 140 mOhm @ 8.5A, 5V |
Input Capacitance (Ciss) @ Vds | 1190pF @ 25V |
Power - Max | 88W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 22nC @ 5V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | NTB5605P NTB5605P |