MOSFET 60V 45A N-Channel
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 45 A | ||
Resistance Drain-Source RDS (on) : | 26 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | D2PAK | Packaging : | Tube |
Rating | Symbol | Value | Unit |
DraintoSource Voltage | VDSS | 60 | Vdc |
DraintoGate Voltage (RGS = 10 M) | VDGR | 60 | Vdc |
GatetoSource Voltage Continuous NonRepetitive (tp*10 s) |
VGS VGS |
±20 ±30 |
Vdc |
Drain Current Continuous @ TA = 25°C Continuous @ TA = 100°C Single Pulse (tp 10 ms) |
ID ID IDM |
45 30 150 |
Adc Apk |
Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1.) Total Power Dissipation @ TA = 25°C (Note 2.) |
PD | 125 0.83 3.2 2.4 |
W W/°C W W |
Operating and Storage Temperature Range | TJ, Tstg | -55 to +175 |
°C |
Single Pulse DraintoSource Avalanche Energy Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vdc, RG = 25 IL(pk) = 40 A, L = 0.3 mH, VDS = 60 Vdc) |
EAS | 240 | mJ |
NTB45N06 Designed for low voltage, high speed switching applications power supplies, converters and power motor controls and bridge circuits.