MOSFET -60V -27.5A Pchannel
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 15 V | Continuous Drain Current : | 25 A | ||
Resistance Drain-Source RDS (on) : | 82 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | D2PAK | Packaging : | Reel |
Technical/Catalog Information | NTB25P06T4 |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 27.5A |
Rds On (Max) @ Id, Vgs | 82 mOhm @ 25A, 10V |
Input Capacitance (Ciss) @ Vds | 1680pF @ 25V |
Power - Max | 120W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 50nC @ 10V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | NTB25P06T4 NTB25P06T4 NTB25P06T4OS ND NTB25P06T4OSND NTB25P06T4OS |