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NTB25P06G

MOSFET -60V -27.5A Pchannel

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SeekIC No. : 00162171 Detail

NTB25P06G: MOSFET -60V -27.5A Pchannel

NTB25P06G Data Sheet

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Part Number:
NTB25P06G
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

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Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 15 V Continuous Drain Current : 25 A
Resistance Drain-Source RDS (on) : 82 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Tube    

Description

Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Transistor Polarity : P-Channel
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 15 V
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 25 A
Resistance Drain-Source RDS (on) : 82 mOhms


Parameters:

Technical/Catalog InformationNTB25P06G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C27.5A
Rds On (Max) @ Id, Vgs82 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 1680pF @ 25V
Power - Max120W
PackagingTube
Gate Charge (Qg) @ Vgs50nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTB25P06G
NTB25P06G



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