NT128D64S88A0G

Features: • 184 -Pin Unbuffered 8 -Byte Dual In -Line Memory Module• 16Mx64 Double Data Rate (DDR) SDRAM DIMM(16M X 8 SDRAMS)• Performance :• Intended for 100 MHz and 133 MHz applications• Inputs and outputs are SSTL -2 compatible• VDD = 2.5Volt ±?0.2, VDD = 2.5...

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SeekIC No. : 004435767 Detail

NT128D64S88A0G: Features: • 184 -Pin Unbuffered 8 -Byte Dual In -Line Memory Module• 16Mx64 Double Data Rate (DDR) SDRAM DIMM(16M X 8 SDRAMS)• Performance :• Intended for 100 MHz and 133 MHz...

floor Price/Ceiling Price

Part Number:
NT128D64S88A0G
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/23

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Product Details

Description



Features:

• 184  -Pin Unbuffered 8  -Byte Dual In  -Line Memory Module
• 16Mx64 Double Data Rate (DDR) SDRAM DIMM(16M X 8 SDRAMS)
• Performance :
• Intended for 100 MHz and 133 MHz applications
• Inputs and outputs are SSTL  -2 compatible
• VDD = 2.5Volt ±?0.2, VDD = 2.5Volt ± 0.2
• Single Pulsed RAS interface
• SDRAMs have 4 internal banks for concurrent operation
• Module has one physical bank
• Differential clock inputs
• Data is read or written on both clock edges
• DRAM DLL aligns DQ and DQS transitions with clock transitions. Also aligns QFC transitions with clock during Read cycles
• Address and control signals are fully synchronous to positive clock edge
• Programmable Operation:
  - DIMMCAS Latency: 2, 2.5
  - Burst Type: Sequential or Interleave
  - Burst Length: 2, 4, 8
  - Operation: Burst Read and Write
• Auto Refresh (CBR) and Self Refresh Modes
• Automatic and controlled precharge commands
• 12/10/2 Addressing (row/column/bank)
• 15.6 µs Max. Average Periodic Refresh Interval
• Serial Presence Detect
• Gold contacts
• SDRAMs in 66  -pin TSOP Type II Package



Specifications

Symbol Parameter Rating Units
VIN, VOUT Voltage on I/O pins relative to Vss -0.5 to VDDQ+0.5 V
VIN Voltage on Input relative to Vss -0.5 to +3.6 V
VDD Voltage on VDD supply relative to Vss -0.5 to +3.6 V
VDDQ Voltage on VDDQ supply relative to Vss -0.5 to +3.6 V
TA Operating Temperature (Ambient) 0 to+70 °C
TSTG Storage Temperature (Plastic) -55 to +150 °C
PD Power Dissipation TBD W
IOUT Short Circuit Output Current 50 mA



Description

NT128D64S88A0G is an unbuffered 184-Pin Double Data Rate (DDR) Synchronous DRAM Dual In-Line Memory Module (DIMM), organized as a one-bank high-speed memory array. The 16Mx64 module is a single-bank DIMM that uses eight 16Mx8 DDR SDRAMs in 400 mil TSOP packages. The DIMM achieves high-speed data transfer rates of up to 266MHz. The DIMM is intended for use in applications operating from 100 MHz to 133 MHz clock speeds with data rates of 200 to 266 MHz. Clock enable CKE0 controls all devices on the DIMM.

Prior to any access operation, the device NT128D64S88A0G CAS latency and burst type/ length/operation type must be programmed into the DIMM by
address inputs A0-A11 and I/O inputs BA0 and BA1 using the mode register set cycle.

These DIMMs NT128D64S88A0G are manufactured using raw cards developed for broad industry use as reference designs. The use of these common
design files minimizes electrical variation between suppliers.

The DIMM NT128D64S88A0G uses serial presence detects implemented via a serial EEPROM using the two-pin IIC protocol. The first 128 bytes of serial PD
data are programmed and locked during module assembly. The last 128 bytes are available to the customer.

All NANYA 184 DDR SDRAM DIMMs NT128D64S88A0G provide a high-performance, flexible 8-byte interface in a 5.25" long space-saving footprint.




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