NSS60200LT1G

Transistors Bipolar (BJT) LO V PNP TRANSISTOR 60V 4.0A

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NSS60200LT1G: Transistors Bipolar (BJT) LO V PNP TRANSISTOR 60V 4.0A

floor Price/Ceiling Price

US $ .14~.3 / Piece | Get Latest Price
Part Number:
NSS60200LT1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.3
  • $.23
  • $.19
  • $.14
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 2 A
DC Collector/Base Gain hfe Min : 150 at 10 mA at 2 V Configuration : Single
Maximum Operating Frequency : 100 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SOT-23
Packaging : Reel    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 60 V
Package / Case : SOT-23
Emitter- Base Voltage VEBO : 7 V
Maximum Operating Frequency : 100 MHz (Min)
Maximum DC Collector Current : 2 A
DC Collector/Base Gain hfe Min : 150 at 10 mA at 2 V


Parameters:

Technical/Catalog InformationNSS60200LT1G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)60V
Current - Collector (Ic) (Max)2A
Power - Max460mW
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic220mV @ 200mA, 2A
Frequency - Transition100MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, Micro3?, SSD3, SST3
PackagingDigi-Reel?
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NSS60200LT1G
NSS60200LT1G
NSS60200LT1GOSDKR ND
NSS60200LT1GOSDKRND
NSS60200LT1GOSDKR



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