NSI50010YT1G

The features of NSI50010YT1G are as follows: (1)Robust Power Package: 460 mW; (2)Wide Operating Voltage Range; (3)Immediate Turn-On; (4)Voltage Surge Suppressing - Protecting LEDs; (5)AEC-Q101 Qualified; (6)SBT (Self-Biased Transistor) Technology; (7)Negative Temperature Coefficient; (8)These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant.

The following is about the absolute maximum ratings of NSI50010YT1G: (1)Anode-Cathode Voltage: 50 V; (2)Reverse Voltage: 500 mV; (3)Operating and Storage Junction Temperature Range: -55 to +150 °C; (4)ESD Rating: Human Body Model: Class 1C, Machine Model: Class B.

The electrical characteristics of the NSI50010YT1G are: (1)Steady State Current @ Vak = 7.5 V: 7.0 mA min, 10 mA typ and 13 mA max; (2)Voltage Overhead: 1.8 V; (3)Pulse Current @ Vak = 7.5 V: 7.1 mA min, 10.5 mA typ and 13.8 mA max; (4)Capacitance @ Vak = 7.5 V: 2.5 pF; (5)Capacitance @ Vak = 0 V: 5.7 pF.