NSI45060DDT4G

The features of NSI45060DDT4G are as follows: (1)Robust Power Package: 2.7 Watts; (2)Adjustable up to 100 mA; (3)Wide Operating Voltage Range; (4)Immediate Turn-On; (5)Voltage Surge Suppressing - Protecting LEDs; (6)AEC-Q101 Qualified; (7)SBT (Self-Biased Transistor) Technology; (8)Negative Temperature Coefficient; (9)Eliminates Additional Regulation; (10)These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant.

The following is about the absolute maximum ratings of NSI45060DDT4G: (1)Anode-Cathode Voltage: 45 V; (2)Reverse Voltage: 500 mV; (3)Operating and Storage Junction Temperature Range: -55 to +150 °C; (4)ESD Rating: Human Body Model: Class 2, Machine Model: Class B.

The electrical characteristics of the NSI45060DDT4G are: (1)Steady State Current @ Vak = 7.5 V: 51 mA min, 60 mA typ and 69 mA max; (2)Voltage Overhead: 1.8 V; (3)Pulse Current @ Vak = 7.5 V: 54.7 mA min, 66mA typ and 76.95 mA max; (4)Capacitance @ Vak = 7.5 V: 15 pF; (5)Capacitance @ Vak = 0 V: 70 pF.