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NSB13211DW6T1G

TRANS BRT DUAL COMPL SC-88

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SeekIC No. : 003435704 Detail

NSB13211DW6T1G: TRANS BRT DUAL COMPL SC-88

NSB13211DW6T1G Data Sheet

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Part Number:
NSB13211DW6T1G
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Series: - Manufacturer: ON Semiconductor
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k, 10k
Resistor - Emitter Base (R2) (Ohms): 4.7k, 10k Breakdown Voltage : 22.8 V
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V / 15 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA Frequency - Transition: -
Power - Max: 230mW Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88    

Description

Series: -
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88
Packaging: Tape & Reel (TR)
Current - Collector Cutoff (Max): 500nA
Manufacturer: ON Semiconductor
Power - Max: 230mW
Resistor - Base (R1) (Ohms): 4.7k, 10k
Resistor - Emitter Base (R2) (Ohms): 4.7k, 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V / 15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 250mV @ 1mA, 10mA


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