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NP88N04DHE

Features: • Channel temperature 175 degree rated• Super low on-state resistanceRDS(on) = 4.3 m MAX. (VGS = 10 V, ID = 44 A)• Low input capacitanceCiss = 7300 pF TYP.• Built-in gate protection diodeSpecifications Drain to Source Voltage (VGS = 0 V) VDSS 40 V Gate ...

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NP88N04DHE: Features: • Channel temperature 175 degree rated• Super low on-state resistanceRDS(on) = 4.3 m MAX. (VGS = 10 V, ID = 44 A)• Low input capacitanceCiss = 7300 pF TYP.• Built-i...

NP88N04DHE Data Sheet

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Part Number:
NP88N04DHE
Supply Ability:
5000

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Product Details

Description



Features:

• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on) = 4.3 m MAX. (VGS = 10 V, ID = 44 A)
• Low input capacitance
Ciss = 7300 pF TYP.
• Built-in gate protection diode


Specifications

Drain to Source Voltage (VGS = 0 V) VDSS 40 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25°C) Note1 ID(DC) ±88 A
Drain Current (pulse) Note2 ID(pulse) ±352 A
Total Power Dissipation (TA = 25°C) PT1 1.8 W
Total Power Dissipation (TC = 25°C) PT2 288 W
Channel Temperature Tch 175 °C
Storage Temperature Tstg −55 to +175 °C
Single Avalanche Current Note3 IAS 75/88 A
Single Avalanche Energy Note3 EAS 562/232 mJ

Notes 1. Calculated constant current according to MAX. allowable channel temperature.
2. PW 10 s, Duty cycle 1%
3. Starting Tch = 25°C, VDD = 20 V, RG = 25 , VGS = 20 0 V (see Figure 4.)


Description

These products NP88N04DHE are N-channel MOS Field Effect Transistors designed for high current switching applications.


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