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NP84N04KHE

Features: • Channel temperature 175 degree rated• Super low on-state resistanceRDS(on) = 5.2 m MAX. (VGS = 10 V, ID = 42 A)• Low input capacitanceCiss = 4410 pF TYP.• Built-in gate protection diodeSpecificationsDrain to Source Voltage (VGS = 0 V) VDSS 40 VGate to Source Vol...

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NP84N04KHE: Features: • Channel temperature 175 degree rated• Super low on-state resistanceRDS(on) = 5.2 m MAX. (VGS = 10 V, ID = 42 A)• Low input capacitanceCiss = 4410 pF TYP.• Built-i...

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Part Number:
NP84N04KHE
Supply Ability:
5000

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Product Details

Description



Features:

• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on) = 5.2 m MAX. (VGS = 10 V, ID = 42 A)
• Low input capacitance
Ciss = 4410 pF TYP.
• Built-in gate protection diode


Specifications

Drain to Source Voltage (VGS = 0 V)         VDSS     40 V
Gate to Source Voltage (VDS = 0 V)         VGSS ±20 V
Drain Current (DC) (TC = 25°C) Note1   ID(DC) ±84 A
Drain Current (Pulse) Note2                    ID(pulse) ±336 A
Total Power Dissipation (TC = 25°C)      PT 200 W
Total Power Dissipation (TA = 25°C)      PT1.8 W
Channel Temperature                             Tch 175 °C
Storage Temperature                              Tstg −55 to +175 °C
Single Avalanche Current Note3              IAS 84/61/22 A
Single Avalanche Energy Note3               EAS 70/372/484 mJ


Description

These products NP84N04KHE are N-channel MOS Field Effect Transistors designed for high current switching applications


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