Position: Home  > All Categories> Integrated Circuits (ICs) > NP33N06YDG-E1-AY

NP33N06YDG-E1-AY

MOSFET N-CH 60V 33A 8HSON

product image

NP33N06YDG-E1-AY Picture
See larger image
SeekIC No. : 003434114 Detail

NP33N06YDG-E1-AY: MOSFET N-CH 60V 33A 8HSON

NP33N06YDG-E1-AY Data Sheet

floor Price/Ceiling Price

US $ .49~1.12 / Piece | Get Latest Price
Part Number:
NP33N06YDG-E1-AY
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~25
  • 25~100
  • 100~250
  • 250~500
  • 500~1000
  • Unit Price
  • $1.12
  • $1
  • $.88
  • $.79
  • $.69
  • $.62
  • $.49
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: - Manufacturer: Renesas Electronics America
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 15.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 33A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 14 mOhm @ 16.5A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) @ Vgs: 78nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 3900pF @ 25V
Power - Max: 1W Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead Exposed Pad Supplier Device Package: 8-HSON    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Drain to Source Voltage (Vdss): 60V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power - Max: 1W
Current - Continuous Drain (Id) @ 25° C: 33A
Gate Charge (Qg) @ Vgs: 78nC @ 10V
Input Capacitance (Ciss) @ Vds: 3900pF @ 25V
Manufacturer: Renesas Electronics America
Rds On (Max) @ Id, Vgs: 14 mOhm @ 16.5A, 10V
Package / Case: 8-SMD, Flat Lead Exposed Pad
Supplier Device Package: 8-HSON


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
RF and RFID
X3C26P1-30S
1P620S
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
Memory Cards, Modules
WT32
VTL5C7
Optoelectronics
SFH7770
TLP423J
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Test Equipment
TOP853
TOP2005
View more