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NP160N04TDG-E1-AY

MOSFET N-CH 40V 160A TO-263

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SeekIC No. : 003430285 Detail

NP160N04TDG-E1-AY: MOSFET N-CH 40V 160A TO-263

NP160N04TDG-E1-AY Data Sheet

floor Price/Ceiling Price

US $ 1.35~1.35 / Piece | Get Latest Price
Part Number:
NP160N04TDG-E1-AY
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~800
  • Unit Price
  • $1.35
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Series: - Manufacturer: Renesas Electronics America
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V Continuous Drain Current : 15 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 160A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 2 mOhm @ 80A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) @ Vgs: 270nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 15750pF @ 25V
Power - Max: 1.8W Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Supplier Device Package: TO-263-7    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power - Max: 1.8W
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 40V
Gate Charge (Qg) @ Vgs: 270nC @ 10V
Manufacturer: Renesas Electronics America
Current - Continuous Drain (Id) @ 25° C: 160A
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package: TO-263-7
Rds On (Max) @ Id, Vgs: 2 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds: 15750pF @ 25V


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