Transistors Bipolar (BJT) 200W NPN
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 250 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 16 A |
DC Collector/Base Gain hfe Min : | 20 at 8 A at 5 V | Configuration : | Single |
Maximum Operating Frequency : | 4 MHz (Min) | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-3P |
Packaging : | Tube |
Technical/Catalog Information | NJW21194G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 250V |
Current - Collector (Ic) (Max) | 16A |
Power - Max | 200W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 8A, 5V |
Vce Saturation (Max) @ Ib, Ic | 1.4V @ 800mA, 8A |
Frequency - Transition | 4MHz |
Current - Collector Cutoff (Max) | 100A |
Mounting Type | Through Hole |
Package / Case | TO-3P-3, TO-247-3 |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NJW21194G NJW21194G |