NJM13600

The NJM13600 consists of two current controlled transconductance amplifiers each with differential inputs and a push pull output. The two amplifiers share common supplies but otherwise operate independently. Linearizing  diodes are provided at the inputs to reduce distortion and allow higher input levels.The results is a 10 dB signal-to-noise improvement referenced to 0.5 percent THD.Controlled impedance buffers of NJM13600 are provided which are especially designed to complement the dynamic range of the amplifiers.

Features of the NJM13600 are:(1)package outline; (2)bipolar technology.The results is a 10 dB signal-to-noise improvement referenced to 0.5 percent THD.Controlled impedance buffers are provided which are especially designed to complement the dynamic range of the amplifiers.

The absolute maximum ratings of the NJM13600 can be summarized as:(1)supply voltage:36V;(2)storage temperature range:-40 to +125;(3)operating temperature range:-20 to +75 ;(4)power dissipation:700mW;(5)differential input voltage:±5V;(6)diode bias current:2mA;(7)amp bias curcent:2mA;(8)buffer output current:20mA.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s).In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement.In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.

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