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NJG1506R

Features: Single and low positive supply voltage +2.5~+5.5VLow insertion loss 0.3dB typ. @f=1GHz, Pin=0dBmHigh isolation28dBm typ. @f=1GHz, Pin=0dBmTransmission Power 19dBm max. @f=2GHz, VCTR=3.0VLow control current 1uA typ. @f=0.05~2.5GHz, Pin=10dBmPackageVSP8 (Mount Size: 4.0x2.9x1.2mm)Specifica...

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NJG1506R: Features: Single and low positive supply voltage +2.5~+5.5VLow insertion loss 0.3dB typ. @f=1GHz, Pin=0dBmHigh isolation28dBm typ. @f=1GHz, Pin=0dBmTransmission Power 19dBm max. @f=2GHz, VCTR=3.0VLo...

NJG1506R Data Sheet

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Part Number:
NJG1506R
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Single and low positive supply voltage                           +2.5~+5.5V
Low insertion loss                                                           0.3dB typ. @f=1GHz, Pin=0dBm
High isolation                                                                  28dBm typ. @f=1GHz, Pin=0dBm
Transmission Power                                                        19dBm max. @f=2GHz, VCTR=3.0V
Low control current                                                         1uA typ. @f=0.05~2.5GHz, Pin=10dBm
Package                                                                           VSP8 (Mount Size: 4.0x2.9x1.2mm)


Specifications

PARAMETER
SYMBOL
RATINGS
UNITS
Input power
Pin
28
dBm
Control voltage
VCTR
6.0
V
Power dissipation
PD
320
mW
Operating Temp.
Topr
-30~+85
°C
Storage Temp.
Tstg
-40~+150
°C



Description

NJG1506R is a GaAs SPDT switch IC which features low loss, high isolation and low control current and ideally suitable for switching the RF receiving circuit of cellular phone.

NJG1506R is operated in the wide frequency range from 50MHz to 3GHz at low voltage from 2.5V with a small VSP8 package.




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