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NIMD6302R2

MOSFET NFET S08D 30V .050R

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SeekIC No. : 00164627 Detail

NIMD6302R2: MOSFET NFET S08D 30V .050R

NIMD6302R2 Data Sheet

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Part Number:
NIMD6302R2
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 6.5 A
Resistance Drain-Source RDS (on) : 50 mOhms Configuration : Dual
Mounting Style : SMD/SMT Package / Case : SOIC-8 Narrow
Packaging : Reel    

Description

Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Configuration : Dual
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 50 mOhms
Continuous Drain Current : 6.5 A


Specifications

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
30
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
30
Vdc
GatetoSource Voltage
VGS
±16
Vdc
Drain Current
Continuous @ TA = 25°C
Continuous @ TA = 100°C (Note 3)
Pulsed (tp10 s)
ID
ID
IDM
6.5
4.4
33
Adc
Adc
Apk
Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
PD
PD
1.3
1.67
W
Thermal Resistance
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
RJA
RJA
96
75
°C/W
Single Pulse DraintoSource Avalanche
Energy (Note 3)
(VDD = 25 Vdc, VGS = 10 Vdc,
VDS = 20 Vdc, IL = 15 Apk, L = 10 mH, RG =
25 )
EAS
250
mJ



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