Features: • Ultra Low OnResistance Provides Higher Efficiency and Extends Battery Life• Logic Level Gate Drive Can Be Driven by Logic ICs• Withstand High Energy in Avalanche and Commutation Modes• Diode Characterized for Use in Bridge Circuits• Diode Exhibits High Sp...
NGSF3443VT3: Features: • Ultra Low OnResistance Provides Higher Efficiency and Extends Battery Life• Logic Level Gate Drive Can Be Driven by Logic ICs• Withstand High Energy in Avalanche and C...
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Features: • Ultra Low OnResistance Provides Higher Efficiency and Extends Battery Life•...
Rating | Symbol | Value | Unit |
DraintoSource Voltage | VDSS | 20 | Vdc |
DraintoGate Voltage (RGS = 1.0 MW) | VDGR | 20 | Vdc |
GatetoSource Voltage - Continuous |
VGS |
±12 | Vdc |
Thermal Resistance, JunctiontoAmbient |
RqJA | 62.5 | °C/W |
Drain - Continuous - Continuous @ 70°C - Pulsed Drain Current(1) |
ID ID IDM |
4.4 3.5 20 |
Adc Apk |
Total Power Dissipation Derate above 25°C |
PD |
2.0 20 |
Watts mW/°C |
Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 30 Vdc, VGS = 5.0 Vdc, Peak IL = 9.0 Apk, L = 5.0 mH, RG = 25) |
EAS | 75 | mJ |
Operating and Storage Temperature Range | TJ, Tstg | 55 to 150 | °C |
MiniMOS NGSF3443VT3 devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. NGSF3443VT3 can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.